✦ LIBER ✦

Crystal growth and defects in Ga3PO7 crystals

✍ Scribed by Guogang Xu; Jing Li; Yongjie Guo; Shujuan Han; Jiyang Wang

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 156 KB
Volume: 45
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.201000080

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✦ Synopsis

Crystals with a non-centrosymmetric structure are of great interest owing to their properties such as ferroelectricity, piezoelectricity, dielectric behavior and optical properties. In this letter, Ga 3 PO 7 crystals are grown by the top-seeded solution growth (TSSG) method from a Li 2 O-3MoO 3 flux. It crystallizes in a noncentrosymmetric trigonal crystal system with space group R3m within point group 3m. The growth defects are investigated by means of chemical etching method. The results reveal hot concentrated phosphoric acid to be a good etchant for Ga 3 PO 7 . The main defects are cracks, inclusions, dislocations and twin. In the meantime, the effective measures for reducing the defects are proposed.

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