Crossover from Hopping to Diffusive Transport with Increasing Gate Voltage in Poly-Si MOS Inversion Layer

✍ Scribed by S. Ishida; K. Oto; S. Takaoka; K. Murase; T. Serikawa

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 141 KB
• Volume: 218
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(200003)218:1<89::aid-pssb89>3.0.co;2-9