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Cross-sectional reflection electron microscopy of III-V compound epilayers

✍ Scribed by De Cooman, B. C. ;Kuesters, K.-H. ;Carter, C. B.

Publisher: Wiley (John Wiley & Sons)
Year: 1985
Tongue: English
Weight: 937 KB
Volume: 2
Category: Article
ISSN: 0741-0581
DOI: 10.1002/jemt.1060020603

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✦ Synopsis

Reflection electron microscopy (REM) is shown to be applicable to the testing of the quality of A1,Gal -.As/GaAs layer structures. Crosssectional images of quantum well structures with layer thickness down to 1 nm can be obtained. The practical aspects of the REM technique are presented. The most important advantages and drawbacks of cross-sectional REM are discussed in detail.

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