Critical current properties of V3Ga with third element additions

✍ Scribed by T.L. Francavilla; D.G. Howe

• Publisher: Elsevier Science
• Year: 1979
• Tongue: English
• Weight: 306 KB
• Volume: 19
• Category: Article
• ISSN: 0011-2275
• DOI: 10.1016/0011-2275(79)90108-5

✦ Synopsis

Critical current densities of over I. 7 x 106 Acm -2 at 10 T and 4.2 K have been achieved in multifilamen tary V 3 Ga wire produced by a modified bronze technique. A ttemp ts to further improve this value were made by adding a third element, either Ti or Zr, to the V-Ga alloy filaments along with AI to the Cu-Ga matrix. The effects of reaction temperature and layer thickness with the third element additions were qualitatively similar to those measured for wires without third element additions, ie lower reaction temperatures and smaller layer thickness gave higher Jc values. A t low reaction temperatures, these composite wires with third element additions exhibited slower growth rates and lower Jc values than those obtained for V-Ga cores in a Cu-Ga matrix, at higher temperatures just the opposite was true. In all cases, however, the Jc values obtained were lower than the best we have been able to achieve using V + Ga filaments and Cu + Ga matrix under optimum conditions.