Crack-free and low dislocation density GaAs-on-Si grown by 2-reactor MOCVD system

✍ Scribed by T. Nishimura; K. Kadoiwa; M. Miyashita; H. Kumabe; T. Murotani

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 485 KB
• Volume: 112
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(91)90136-s