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Coulomb interaction effects on the terahertz photon-assisted tunneling through an InAs quantum dot

โœ Scribed by Yuan, R.-Y.; Zhu, G.-B.; Zhao, X.; Guo, Y.; Yan, H.; Sun, Q.; Ji, A.-C.


Book ID
121860410
Publisher
The American Physical Society
Year
2014
Tongue
English
Weight
254 KB
Volume
89
Category
Article
ISSN
1098-0121

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InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 8C). With increasing excitation densi