Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate

✍ Scribed by Ishikuro, H.; Fujii, T.; Saraya, T.; Hashiguchi, G.; Hiramoto, T.; Ikoma, T.

• Book ID: 119992563
• Publisher: American Institute of Physics
• Year: 1996
• Tongue: English
• Weight: 507 KB
• Volume: 68
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.116645