Coulomb blockade memory using integrated single-electron transistor/metal-oxide-semiconductor transistor gain cells

✍ Scribed by Durrani, Z.A.K.; Lnine, A.C.; Ahmed, H.

• Book ID: 114538470
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 134 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.887016