β Scribed by L. Adams
No coin nor oath required. For personal study only.
Cosmic ray effects in microelectronics are presently of major concem in satellite technology, beginning to present problems in digital avionics, particulady high flying aircraft.
The cosmic ray effect, often referred to as a "single event upset" (SEU) is the result of passage of a naturally occurring, energetic, heavy ion through a sensitive region of a microcircuit. The dense, Iocalised ionisation along the track of the ion can result in the generation of sufficient charge to change the state of an internal node resulting in a false logic transition.
A more serious cosmic ray effect is 'latch-up" which is the result of an SCR action in certain microcircuit technologies, is permanent in nature and potentially destructive.
This paper describes the phenomenon of single event upset resulting from cosmic ray effects, discusses its impact in terms of microcircuit technology and describes the current status and future trends in ground testing techniques.
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