✦ LIBER ✦
Corrigendum to “Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HfO2/interface-layer gate-stack MOSFETs” [Microelectron. Eng. 88 (7) (2011) 1421–1424]
✍ Scribed by T. Matsuki; R. Hettiarachchi; W. Feng; K. Shiraishi; K. Yamada; K. Ohmori
- Book ID
- 113797921
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 185 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0167-9317
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