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Corrigendum to “Effect of laser field and thermal stress on diffusion in laser doping of SiC” [Acta Mater 55 (2007) 6816–6824]

✍ Scribed by Sachin Bet; Nathaniel Quick; Aravinda Kar


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
84 KB
Volume
56
Category
Article
ISSN
1359-6454

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Effect of laser field and thermal stress
✍ Sachin Bet; Nathaniel Quick; Aravinda Kar 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 407 KB

The electromagnetic field of lasers and non-equilibrium doping conditions enable laser doping of SiC with increased dopant diffusivity. Chromium, which acts as a double acceptor, has been laser-doped in SiC wafers. A thermal model is utilized to determine the temperature distribution at various dept