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Correlation of Photoluminescence and Bandgap Energies with Nanocrystal Sizes in Porous Silicon

✍ Scribed by J. Von Behren; M. Wolkin-Vakrat; J. Jorné; P.M. Fauchet


Book ID
110278184
Publisher
Springer
Year
2000
Tongue
English
Weight
43 KB
Volume
7
Category
Article
ISSN
1380-2224

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An analysis about the change of photoluminescence (PL) intensity during ageing in porous silicon (p-Si) at room temperature (RT) is reported. PL measurements have been correlated to Fourier transform infrared spectrometry (FTIR), UV-Vis reflectance spectra (RS) and transmission electron microscopy (