Correlation betweenE1transition broadening and carrier mobility in the channel layer of pseudomorphic high electron mobility transistor epistructures

✍ Scribed by P. L. Stephan Thamban; P. Pinsukanjana; R. Glosser

• Publisher: Springer US
• Year: 2007
• Tongue: English
• Weight: 291 KB
• Volume: 18
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/s10854-007-9251-3