Correlation between structure and photoluminescence in amorphous hydrogenated silicon nitride alloys

✍ Scribed by M. Molinari; H. Rinnert; M. Vergnat

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 250 KB
• Volume: 16
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00629-x

✦ Synopsis

As-deposited a-SiNx:H (0:1 ¡ x ¡ 0:9) thin ÿlms prepared by evaporation of silicon under a ow of nitrogen and hydrogen ions exhibit visible photoluminescence at room temperature without any posttreatment. The nitrogen concentration was determined by X-ray photoemission spectroscopy. The structural characterization was performed with Fourier transform infrared absorption spectroscopy. The optical gap was obtained from transmission measurements in the ultraviolet-visiblenear infrared range. These studies were correlated to the evolution of the photoluminescence properties.