Correlation between interfacial segregation and surface-energy-induced selective grain growth in 3% silicon–iron alloy
✍ Scribed by N.H Heo; K.H Chai; J.G Na
- Book ID
- 104402277
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 662 KB
- Volume
- 48
- Category
- Article
- ISSN
- 1359-6454
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✦ Synopsis
AbstractÐEects of ®nal reduction and interfacial segregation of sulfur on surface-energy-induced selective grain growth have been investigated in 3% silicon±iron alloy strips with various bulk content of sulfur. Interfacial segregation kinetics of sulfur varies with annealing atmosphere: a convex pro®le under vacuum or hydrogen and a gradual increase under argon. This is because the segregated sulfur evaporates or gasi-®es to hydrogen sul®de during ®nal vacuum or hydrogen annealing, resulting in a sulfur-depleted zone just below the strip surface. The surface-energy-induced selective growth of a grain at time t is determined by the concentration of segregated sulfur. The selective growth rate depends on the combined eect of the segregated sulfur and the ®nal reduction that determines the average grain size. For obtaining 110001 Goss texture, the ®nal reduction should, therefore, be controlled, depending on the bulk content of sulfur which in¯uences directly the segregation kinetics of sulfur and thus the texture development.