𝔖 Bobbio Scriptorium

✦ LIBER ✦

Correlation between hot-carrier-induced interface states and GIDL current increase in n-MOSFET's

✍ Scribed by Lai, P.T.; Xu, J.P.; Wong, W.M.; Lo, H.B.; Cheng, Y.C.

Book ID: 114537140
Publisher: IEEE
Year: 1998
Tongue: English
Weight: 212 KB
Volume: 45
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.658689

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Hot carrier effects in n-channel polycry

Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations

✍ Fortunato, G.; Pecora, A.; Tallarida, G.; Mariucci, L.; Reita, C.; Migliorato, P 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 724 KB

[IEEE ICSE '96. 1996 IEEE International

[IEEE ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings - Penang, Malaysia (26-28 Nov. 1996)] ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings - New observation and improvement in GIDL current of n-MOSFET's with various kinds of gate oxides under hot-carrier stress

✍ Lai, P.T.; Xu Jingping, ; Zeng, X.; Cheng, Y.C. 📂 Article 📅 1996 🏛 IEEE ⚖ 364 KB