Correction to "Impact-Ionization-Induced Bandwidth-Enhancement of a Si-SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz"

✍ Scribed by Shi, J.-W.; Wu, Y.-S.; Li, Z.-R.; Chen, P.-S.

• Book ID: 119803917
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 22 KB
• Volume: 19
• Category: Article
• ISSN: 1041-1135
• DOI: 10.1109/lpt.2007.908373