Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon

✍ Scribed by Fichtner, P. F. P.; Behar, M.; Kaschny, J. R.; Peeva, A.; Koegler, R.; Skorupa, W.

• Book ID: 119948801
• Publisher: American Institute of Physics
• Year: 2000
• Tongue: English
• Weight: 456 KB
• Volume: 77
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1289062