β Scribed by Zhitao Chen; Kristin Richter; Stephan Riedel; Stefan E Schulz; Thomas Gessner
No coin nor oath required. For personal study only.
In this work, the improvement of MOCVD Cu properties by alloy formation was investigated. Sequential deposited Al / Cu bilayer and Al / Cu /Al trilayer were annealed at 230-4508C in vacuum and H . Additionally, 2 the trilayer was annealed in N . Vacuum annealing of both bilayer and trilayer stacks results in significant 2 interdiffusion of Al into Cu and remarkable resistivity increase accompanied with much better adhesion. A strong adhesion coupled with a moderate resistivity increase was found for the trilayer annealing in N , being a 2 promising approach for fabrication of copper alloy metallization. H annealing provides sufficient adhesion only 2 for the trilayer and only at a very high temperature (4008C). The sheet resistance of all differently processed wafers were stable during half-year-storage except for one sample. The different results between the tested annealing ambients are discussed in detail in this paper.
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