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Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

✍ Scribed by Jamieson, D. N.; Yang, C.; Hopf, T.; Hearne, S. M.; Pakes, C. I.; Prawer, S.; Mitic, M.; Gauja, E.; Andresen, S. E.; Hudson, F. E.; Dzurak, A. S.; Clark, R. G.


Book ID
117995797
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
556 KB
Volume
86
Category
Article
ISSN
0003-6951

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