Controlled nitrogen incorporation at SiSiO2 interfaces and in thin gate dielectrics by remote-plasma-assisted oxidation and deposition processes

✍ Scribed by D.R. Lee; S.V. Hattangady; H. Niimi; C. Parker; G. Lucovsky; J.R. Hauser

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 366 KB
• Volume: 28
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/0167-9317(95)00027-6