Controlled doping of single crystalline diluted magnetic semiconductor Ga1−xMnxN nanowires

✍ Scribed by Yun-Ki Byeun; Kyong-Sop Han; Heon-Jin Choi; Sung-Churl Choi

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 545 KB
• Volume: 452-453
• Category: Article
• ISSN: 0921-5093
• DOI: 10.1016/j.msea.2006.10.071

✦ Synopsis

We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga 1-x Mn x N nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several m. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN 1-x Mn x N nanowires with x > 0.04.