Controlled dislocation slipping: an original method to create multiple quantum wire structures
✍ Scribed by L. Ressier; J.P. Peyrade; J. Barrau; F. Voillot
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 270 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
We propose an original method to fabricate one-dimensional (1D) semiconductor nanostructures using dislocations, generated by plastic deformation, as atomic scale saws to cut a 2D-structure into a multiple quantum wire structure. The 2D-structure used to apply this method is a 5 nm GaAs/GaAlAs quantum well grown by molecular beam epitaxy on a (001) GaAs substrate.
The photoluminescence (PL) spectrum of the plastically deformed quantum well exhibits an 8 meV blue shift of the exciton peak, compared to the PL spectrum of the quantum well before deformation. The statistical analysis of transmission electron microscopy crosssection observations reveals a communicating multiple quantum wire structure (or lateral superlattice), composed of coupled GaAs/GaAlAs quantum wires of 18 ± 9 nm width.
A calculation of the 1D-confinement levels, based on the tight binding method, confirms the creation of such a lateral superlattice by correlating quantitatively the PL results with microscopy observations.