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Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate

✍ Scribed by Carsten Reichel; Stephan Kronholz; Thorsten Kammler; Annekathrin Zeun; Gunda Beernink


Book ID
108271850
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
772 KB
Volume
60
Category
Article
ISSN
0038-1101

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