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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

✍ Scribed by Yong Cai; Yugang Zhou; Lau, K.M.; Chen, K.J.

Book ID
114618417
Publisher
IEEE
Year
2006
Tongue
English
Weight
435 KB
Volume
53
Category
Article
ISSN
0018-9383

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## Abstract Enhancement‐mode AlGaN/GaN metal–insulator–semiconductor HFETs (MIS‐HFETs) are demonstrated by combining CF~4~ plasma treatment technique and a two‐step Si~3~N~4~ deposition process. The threshold voltage has been shifted from –4 to 2 V using this technique. A 15 nm Si~3~N~4~ layer is i