Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes

✍ Scribed by Ryou, J.-H.; Lee, W.; Limb, J.; Yoo, D.; Liu, J. P.; Dupuis, R. D.; Wu, Z. H.; Fischer, A. M.; Ponce, F. A.

• Book ID: 120461443
• Publisher: American Institute of Physics
• Year: 2008
• Tongue: English
• Weight: 536 KB
• Volume: 92
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2894514