Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD
✍ Scribed by M. Myronov; Xue-Chao Liu; A. Dobbie; D.R. Leadley
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 474 KB
- Volume
- 318
- Category
- Article
- ISSN
- 0022-0248
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✦ Synopsis
In this work, we have developed a reduced pressure chemical vapor deposition (RP-CVD) epitaxial process to grow strain-balanced Ge/Si 0.4 Ge 0.6 multilayers on 200 mm diameter Si(1 0 0) substrates, via an intermediate relaxed Si 0.2 Ge 0.8 /Ge buffer. The results obtained indicate that with proper selection of the epitaxial growth conditions, strain-balanced multilayered heterostructures can be produced with the precise Si 0.4 Ge 0.6 alloy content and control of the strained epilayer thicknesses to within a few monolayers. XTEM analysis clearly resolved very abrupt Ge/Si 0.4 Ge 0.6 heterointerfaces and the sample surfaces were seen, by AFM, to be very smooth with an RMS surface roughness below 1.5 nm.