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Control of delocalization and structural changes by means of an electric field

✍ Scribed by Padeleimon Karafiloglou


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
396 KB
Volume
27
Category
Article
ISSN
0192-8651

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✦ Synopsis


Abstract

The strength and, mainly, the direction of a static electric field can be used to control delocalization effects occurring in a non‐polar π‐system. The delocalization energy, the weights, and the probabilities of some local electronic structures, the behavior of electron pairs, and the electronic fluctuations are considered and examined in cis‐butadiene, used as model system. The effects of the electric field are detected and evaluated in the basis of natural orbital spaces appropriate to investigate the behavior of one‐ and poly‐electron distributions. The consequences of modifying the delocalization effects on structural changes are also investigated. Full geometry optimizations in both Hartree–Fock and MP2 levels show that the changes in bond lengths, guided by the changes of the behavior of the electronic assembly, can be controlled by means of the electric field. Β© 2006 Wiley Periodicals, Inc. J Comput Chem, 2006


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## Abstract Structural distortions in nonpolar, particularly, in semiconducting silicon crystals, caused by constant electric field have been disclosed by means of X‐ray interferometry. It was shown that in the field both the direction of moirΓ© fringes and the frequency (period) are changed, and th