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Control of defects in the heteroepitaxial growth of GaAs on silicon : R. R. Bradley, J. A. Beswick, T. B. Joyce, P. D. Hodson, P. Kightley, R. I. Taylor, D. J. Stirland and R. J. M. Griffiths. Vacuum 40(4), 339 (1990)


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
127 KB
Volume
31
Category
Article
ISSN
0026-2714

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