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Contribution of domain wall motion to the permittivity of Rochelle salt

✍ Scribed by Gurk, P.

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
426 KB
Volume
10
Category
Article
ISSN
0031-8965

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Domain-wall contribution to magnetoresis
Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer
✍ Wosiński, T. ;Figielski, T. ;Pelya, O. ;MaΜ¨kosa, A. ;Morawski, A. ;Sadowski, J. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 235 KB

## Abstract Low‐temperature charge‐carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The device