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Contribution of dislocations to the zero-bias resistance-area product of LWIR HgCdTe photodiodes at low temperatures

✍ Scribed by Gopal, V.; Gupta, S.

Book ID: 114617465
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 241 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.829857

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## Abstract A study of the contribution of dislocations to the zero‐bias resistance–area product (__R__~0~__A__) of long‐wavelength infrared n‐on‐p mercury cadmium telluride (HgCdTe) diodes has been carried out from the modelling of the temperature dependence of __R__~0~__A__ product of diodes fabr