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Constraints on Models of Electrical Transport in Optimally Doped La2−xSrxCuO4from Measurements of Radiation-Induced Defect Resistance

✍ Scribed by J. A. Clayhold; O. Pelleg; D. C. Ingram; A. T. Bollinger; G. Logvenov; D. W. Rench; B. M. Kerns; M. D. Schroer; R. J. Sundling; I. Bozovic


Publisher
Springer
Year
2009
Tongue
English
Weight
304 KB
Volume
23
Category
Article
ISSN
0896-1107

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