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Configuration Interaction Study of the Low-Lying Electronic States of Silicon Monoxide

โœ Scribed by Chattopadhyaya, Surya; Chattopadhyay, Anjan; Das, Kalyan Kumar


Book ID
127104360
Publisher
American Chemical Society
Year
2003
Tongue
English
Weight
211 KB
Volume
107
Category
Article
ISSN
1089-5639

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Relativistic configuration interaction c
โœ D.A. Chapman; K. Balasubramanian; S.H. Lin ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 307 KB

Relativisuc configuration interaction calculations are described for stx low-lying elertroruc states of J-II. The spearox+ proper~~~ or these states are calculated and compared with available experimental results. 1\_ Intioduction The hydrogen iodide molecule has been of considerable experimental an