Conductive-oxide-gate FET as a gas sensor

✍ Scribed by L.I. Popova; S.K. Andreev; V.K. Gueorguiev; N.A. Tomajova; G.D. Beshkov

• Book ID: 103960201
• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 465 KB
• Volume: 3
• Category: Article
• ISSN: 0925-4005
• DOI: 10.1016/0925-4005(91)80017-e

✦ Synopsis

An n-channel FET, called a COGFET, with a conductive SnO, sensing layer as a gate is proposed. The room-temperature sensitivity for NH3 and ethanol is investigated as a function of the gate resistivity. COGFETs with low gate resistivity (ld-10" ohm/O) are both ethanol and NH, sensitive. Devices with high gate resistivity ( 2 10" ohm/O) are only NH, sensitive. Fast response time and very good reproducibility are obtained. The logarithmic current dependence versus concentration covers more than four decades. Two different slopes are observed in the NH, curve.