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Conduction bandstructure in strained silicon by spatially resolved electron energy loss spectroscopy

✍ Scribed by P.E. Batson


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
843 KB
Volume
59
Category
Article
ISSN
0304-3991

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A "new" non-dipole electronic transition at 7.7 eV in CF,CI has been observed using momentum-transfer-resolved electron energy loss spectroscopy at 2.5 keV impact energy. The generalized oscillator strength (GOS) of this transition has been determined and found to have a shape characteristic of a qu