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Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxy

✍ Scribed by Y. Sugiyama; T. Fujii; Y. Nakata; S. Muto; E. Miyauchi


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
270 KB
Volume
95
Category
Article
ISSN
0022-0248

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