Conductance through a one-atom point contact
β Scribed by F. Yamaguchi; Y. Yamamoto
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 267 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
Linear conductance and current-voltage characteristics in a one-atom point contact are calculated. A one-atom point contact is modeled by a double-barrier tunnel junction with a central island which is either a single atom or an atomic cluster. A finite electron reflection and induced charge at both sides of the tapered constriction alter the conductance from the quantum unit of conductance in a perfectly smooth point contact. The conductance is expressed in terms of a difference W between the work function of the electrodes and the atomic energy level, a charging energy U and an energy level broadening h in our simple model of a one-atom point contact.
π SIMILAR VOLUMES
We present data on the low temperature conductance of a new dual gate silicon device, a point-contact in a metal-oxide-semiconductor field-effect transistor. Just above pinch-off, the conductance oscillates periodically as a function of gate voltage. The parameters obtained from the conductance gate