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Conductance fluctuations in a ballistic in-plane gated InGaAs quantum dot

✍ Scribed by K.M. Connolly; D.P. Pivin; Jr; D.K. Ferry; H.H. Wieder

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 236 KB
Volume: 20
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0082

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✦ Synopsis

Recent experiments have examined the magnetoconductance properties of mesoscopic quantum dots, defined in high mobility GaAs/AlGaAs heterojunctions utilizing split-gate techniques. Here, we report on a submicron, square quantum dot defined in a pseudomorphic InGaAs/GaAs single quantum well through an in-plane gate (IPG) technique. The high mobility of the sample ensures that the mean free path is larger than the characteristic dimensions of the quantum dot; hence transport through the structure is ballistic. These structures exhibit reproducible conductance fluctuations and weak localization. We discuss the results of low temperature studies of fluctuations observed in the low field magnetoconductance. These fluctuations appear to be regular and quasiperiodic, containing only a few frequencies in the Fourier spectrum.

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