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Concerning the nonproductive expenditure of ammonia in nitriding

✍ Scribed by Yu. N. Tel'nyuk

Book ID
112382494
Publisher
Springer US
Year
1968
Tongue
English
Weight
129 KB
Volume
10
Category
Article
ISSN
0026-0673

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## Abstract Surface properties and the principal processes at the growth of gallium nitride on GaN (0001) face in ammonia‐based are modeled using DFT (density functional theory – SIESTA code) ab initio calculations and 2‐d diffusion analysis. The GaN growth methods are: ammonia‐source MBE, MOVPE, a