Concentration and Mobilities of Holes and Electrons in Bi-2223 Thin Films from Analysis of Resistivity and Hall Effect Data

Experimental determination of electron e

Experimental determination of electron effective attenuation lengths in silicon dioxide thin films using synchrotron radiation I. Data analysis and comparisons

✍ Suzuki, M.; Ando, H.; Higashi, Y.; Takenaka, H.; Shimada, H.; Matsubayashi, N.; 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 266 KB 👁 1 views

We have measured effective attenuation lengths (EALs) of 140-1100 eV electrons in ultrathin silicon dioxide layers using synchrotron radiation. These EALs were generally smaller than those reported previously, although there was agreement with the values measured by Hochella and Carim (Surf. Sci. Le