Computer simulation of transition from h-BN TO c-BN during ion beam assisted deposition

✍ Scribed by V.S. Kharlamov; D.V. Kulikov; Yu.V. Trushin

• Book ID: 104266189
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 96 KB
• Volume: 52
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00319-4

✦ Synopsis

A model is proposed of c-BN growth during the ion Beam assisted deposition procces. This phase appears when N and B atoms in h-BN create inserted ab-planes that increase the density of the material, resulting in transition from h-BN to c-BN. The aim is to simulate the processes that occur in growing BN films that lead to the phase transition. The ballistic processes caused by ion beam have been simulated by means of Monte Carlo computer codes TRIRS and DYTRIRS. With the help of computer code GEAR the annealing of the profiles of bombarding particles (Ar, N, B) have been modelled. The sink strengths of dislocation loops and migration energies of Ar, B and N atoms in BN have been estimated. These loops can act as nuclei of inserted ab-planes consisted of B and N, leading to formation of c-BN. It is shown that, according to our model, the transition from h-BN to c-BN is indeed possible, under certain conditions.