Computer simulation of the kinetics of the growth of nitrides in nitrided layers
β Scribed by A. A. Bulgach; G. A. Solodkin; L. A. Gliberman
- Publisher
- Springer US
- Year
- 1984
- Tongue
- English
- Weight
- 550 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0026-0673
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π SIMILAR VOLUMES
Nitriding by microwave post-discharge process involves molecular nitrogen dissociation. It has been observed that nitrogen flux from surface to solid during the early stage does not follow a parabolic regime and that the growth rate of concomitant nitride layers is sensitive to atomic nitrogen conce
## Abstract Heteroepitaxial three dimensional (3D) and two dimensional (2D) growth modes of nitride layers on sapphire substrates are discussed. It is shown that the 3D or 2D growth mode of AlGaN layers depends predominantly on the growth conditions of the underneath low temperature (LT) nucleation