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Computer simulation of the kinetics of the growth of nitrides in nitrided layers

✍ Scribed by A. A. Bulgach; G. A. Solodkin; L. A. Gliberman


Publisher
Springer US
Year
1984
Tongue
English
Weight
550 KB
Volume
26
Category
Article
ISSN
0026-0673

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## Abstract Heteroepitaxial three dimensional (3D) and two dimensional (2D) growth modes of nitride layers on sapphire substrates are discussed. It is shown that the 3D or 2D growth mode of AlGaN layers depends predominantly on the growth conditions of the underneath low temperature (LT) nucleation