Computer Simulation of Current–Voltage Characteristics in Amorphous Silicon p–n Diode Structures under Impurity Photoexcitation

✍ Scribed by Azimov, S. A. ;Karageoegy-Alkalaev, P. M. ;Leiderman, A. Yu. ;Rubin, V. S.

• Publisher: John Wiley and Sons
• Year: 1986
• Tongue: English
• Weight: 314 KB
• Volume: 94
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2210940136