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Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs

✍ Scribed by A. Afzalian; D. Flandre


Book ID
113916031
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
833 KB
Volume
65-66
Category
Article
ISSN
0038-1101

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