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Compound semiconductors for low-noise microwave MESFET applications

✍ Scribed by Golio, J.M.; Trew, R.J.


Book ID
114593452
Publisher
IEEE
Year
1980
Tongue
English
Weight
749 KB
Volume
27
Category
Article
ISSN
0018-9383

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## Abstract The simultaneous determination of noise, gain and scattering parameters through a computer‐driven noise figure measuring system allowed the rapid and accurate characterization of several samples of low noise HEMTs of the same family. From the measured parameters an equivalent circuit mo