๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Compositional profile of heteroepitaxial InAs on GaAs substrates

โœ Scribed by N.K. Wagner


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
496 KB
Volume
38
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


LPE-growth of InAs on GaAs substrates
โœ Butter, E. ;Jacobs, B. ;Stary, J. ๐Ÿ“‚ Article ๐Ÿ“… 1974 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 141 KB
Heteroepitaxy of CdTe on GaAs and silico
โœ J.P. Faurie; R. Sporken; Y.P. Chen; M.D. Lange; S. Sivananthan ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 619 KB

CdTe can be grown directly by molecular beam epitaxy on substrates such as GaAs or silicon, which exhibit very large lattice mismatches of 14.6% and 19% respectively. The occurrence of dual epitaxy, which has been previously reported for growth on (100)GaAs, has also been found recently for growth o