Complexes of self-interstitials with oxygen atoms in germanium

✍ Scribed by L.I. Khirunenko; Yu.V. Pomozov; M. Sosnin; V.P. Markevich; L.I. Murin; V.V. Litvinov; A. Carvalho; R. Jones; J. Coutinho; S. Öberg; P.R. Briddon

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 314 KB
• Volume: 11
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2008.07.007

✦ Synopsis

Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge crystals have been studied by combining experimental and theoretical methods. Self-interstitials were created in oxygen-rich Ge crystals by irradiation with MeV electrons at 80 K, and I-O-related complexes were studied by means of infrared absorption spectroscopy, while the density functional theory was used to model structures, local vibrational modes and electronic properties of IO and I 2 O centers. It is argued that two absorption lines at 674 and 602 cm À1 , which develop upon annealing of irradiated Ge:O crystals in the temperature range 180-220 K, are related to IO complexes, while another set of bands at 713 and 803 cm À1 is related to I 2 O. Those assignments are supported by the comparison with the calculated local vibrational modes of the defects.