Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

✍ Scribed by Liu, Xinjun; Sadaf, Sharif Md.; Park, Sangsu; Kim, Seonghyun; Cha, Euijun; Lee, Daeseok; Jung, Gun-Young; Hwang, Hyunsang

• Book ID: 120469312
• Publisher: IEEE
• Year: 2013
• Tongue: English
• Weight: 388 KB
• Volume: 34
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2012.2235816