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Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol–gel

✍ Scribed by Boerasu, I.; Pintilie, L.; Pereira, M.; Vasilevskiy, M. I.; Gomes, M. J. M.


Book ID
118045965
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
356 KB
Volume
93
Category
Article
ISSN
0021-8979

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✍ L. Pintilie; I. Boerasu; M. Pereira; M.J.M. Gomes 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 250 KB

Pb(Zr, Ti)O 3 (PZT) thin films with Zr/Ti ratio of 92/8 and doped with up to 4 at.% Nb were deposited by sol-gel on Pt coated Si substrates. The scope was to investigate the influence of Nb additive on the structural, optical and electrical properties of Zr-rich PZT phase. It was found that a residu