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Compensation mechanism in silicon-doped gallium arsenide nanowires

✍ Scribed by Ketterer, B.; Mikheev, E.; Uccelli, E.; Fontcuberta i Morral, A.

Book ID: 120474800
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 649 KB
Volume: 97
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3517254

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